型号 PSMN009-100B,118
厂商 NXP Semiconductors
描述 MOSFET N-CH 100V 75A D2PAK
PSMN009-100B,118 PDF
代理商 PSMN009-100B,118
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 75A
开态Rds(最大)@ Id, Vgs @ 25° C 8.8 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 156nC @ 10V
输入电容 (Ciss) @ Vds 8250pF @ 25V
功率 - 最大 230W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 剪切带 (CT)
其它名称 568-6593-1
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